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| BF799W NPN Silicon RF Transistor For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners 3 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2 1 Type BF799W Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS = 107 C Junction temperature Storage temperature Tj Tstg 150 -65 ... 150 C Symbol VCEO VCES VCBO VEBO IC IB Ptot Value 20 30 30 3 35 10 280 mW mA Unit V VSO05561 Marking LKs 1=B Pin Configuration 2=E 3=C Package SOT323 Thermal Resistance Junction - soldering point1) RthJS 155 K/W Apr-15-2003 BF799W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Base-emitter breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 20 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V IC = 20 mA, VCE = 10 V Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA Base-emitter saturation voltage IC = 20 mA, IB = 2 mA VBEsat VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 20 30 3 - - 100 V nA - 35 40 - 95 100 0.1 - 250 0.3 0.95 V AC characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz IC = 20 mA, VCE = 8 V, f = 100 MHz Output capacitance VCB = 10 V, IE = 0 mA, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz, F 3 dB Cce 0.28 Ccb 0.7 Cob fT 800 1100 0.96 pF MHz IC = 20 mA, VCE = 10 V, f = 35 MHz 2 Apr-15-2003 Output conductance ZS = 50 g22e - 60 - S BF799W Total power dissipation Ptot = f (TS ) 300 mW 240 220 P tot 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 3 10 2 Ptotmax / PtotDC K/W - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Apr-15-2003 BF799W Transition frequency fT = f (IC) f = 100MHz BF 799 EHT07116 Collector-base capacitance Ccb = f (VCB) f = 1 MHz BF 799 EHT07117 1200 fT MHz 1000 1.5 Ccb pF VCE = 5 V 800 1.0 600 2V 400 0.5 200 0 0 10 20 30 40 mA 50 0 0 10 V VCB 20 C 4 Apr-15-2003 |
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